Gaya APA

Sudjadi, U. (). Invesgation of Annealing Effect on The Forward Bias and Leakge Current Changes of Type P-6H-SIC Schottky Diodes with SiO2 Ramp Profile after Irradiated Up to 1,75 MGY . : .

Gaya MLA

Sudjadi, Usman. "Invesgation of Annealing Effect on The Forward Bias and Leakge Current Changes of Type P-6H-SIC Schottky Diodes with SiO2 Ramp Profile after Irradiated Up to 1,75 MGY ". : , . .