No Inv.: 110831-110835/P/Perp/07/5c~116121-116123/P/Perp/09/3c~128108/PH/Perp/10/1c
This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended. In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device st…
This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. Al…
This book presents the state-of-the-art of Terahertz spectroscopy. It is a modern source for a beginners and researcher interested in THz spectroscopy. The basics and physical background of THz spectroscopy and technology are explained, and important applications are described. The book presents the highlights of scientific research in the field of THz science and provides an excellent overview…
Judul asli :"Applied electromagnetism"
No Inv.: 118424-118426/P/Perp/09/3c~138280-138284/P/Perp/14/5c~146905/P/Perp/15/1c~147084/P/Perp/15/1c
This monograph forms an interdisciplinary study in atomic, molecular, and quantum information (QI) science. Here a reader will find that applications of the tools developed in QI provide new physical insights into electron optics as well as properties of atoms & molecules which, in turn, are useful in studying QI both at fundamental and applied levels. In particular, this book investigates enta…
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by v…
No Inv.: 1024-1033/P/Perp/97/10c
No Inv.: 2457-2466/P/Perp/97/10c