Ditapis dengan
Effective electron mass in low-dimensional semiconductors
This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effec…
- Edisi
- -
- ISBN/ISSN
- 9783642312489
- Deskripsi Fisik
- xxiv, 536 hlm.
- Judul Seri
- Springer Series in Materials Science (SSMATERIALS, volume 167)
- No. Panggil
- E1706
Theory of bilayer graphene spectroscopy
This thesis presents the theory of three key elements of optical spectroscopy of the electronic excitations in bilayer graphene: angle-resolved photoemission spectroscopy (ARPES), visible range Raman spectroscopy, and far-infrared (FIR) magneto-spectroscopy. Bilayer graphene (BLG) is an atomic two-dimensional crystal consisting of two honeycomb monolayers of carbon, arranged according to Bernal…
- Edisi
- -
- ISBN/ISSN
- 9783642309366
- Deskripsi Fisik
- x, 86 hlm.
- Judul Seri
- Springer Theses
- No. Panggil
- E1700
Energy level alignment and electron transport through metal/organic contacts …
In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them…
- Edisi
- -
- ISBN/ISSN
- 9783642309076
- Deskripsi Fisik
- xviii, 198 hlm.
- Judul Seri
- Springer Theses
- No. Panggil
- E1699
Elektromagnetika
No Inv.: 111067-111069/P/Perp/07/3c~11626-116528/P/Perp/09/3c~138321-138323/P/Perp/14/3c~146855,146856/P/Perp/15/2c
- Edisi
- ed. ke-7
- ISBN/ISSN
- 9797815420
- Deskripsi Fisik
- xvii, 549 hlm.
- Judul Seri
- -
- No. Panggil
- 621.381 HAY e
Dasar-dasar elektronika
No Inv.: 111070-111074/P/Perp/07/5c~118898-118900/P/Perp/09/3c~124516-124525/P/Perp/10/10c~126312-126321/P/Perp/10/10~142922-142926/P/Perp/14/5c
- Edisi
- -
- ISBN/ISSN
- 9797414310
- Deskripsi Fisik
- ix, 202 hlm.
- Judul Seri
- -
- No. Panggil
- 621.381 BIS d
Elektronika digital
No Inv.: 110831-110835/P/Perp/07/5c~116121-116123/P/Perp/09/3c~128108/PH/Perp/10/1c
- Edisi
- -
- ISBN/ISSN
- 9797315223
- Deskripsi Fisik
- viii, 265 hlm.
- Judul Seri
- -
- No. Panggil
- 621.381 MUH e
Semiconductor lasers : stability, instability and chaos
This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended. In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device st…
- Edisi
- 3rd Edition
- ISBN/ISSN
- 9783642301476
- Deskripsi Fisik
- xx, 572 hlm.
- Judul Seri
- Springer Series in Optical Sciences
- No. Panggil
- E1692
Transmission electron microscopy and diffractometry of materials
This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. Al…
- Edisi
- Fourth Edition
- ISBN/ISSN
- 9783642297618
- Deskripsi Fisik
- xx, 764 hlm.
- Judul Seri
- Graduate Texts in Physics
- No. Panggil
- E1691
Optical absorption of impurities and defects in semiconducting crystals : ele…
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by v…
- Edisi
- -
- ISBN/ISSN
- 9783642180187
- Deskripsi Fisik
- xxviiii, 512 hlm.
- Judul Seri
- Springer Series in Solid-State Sciences (SSSOL, volume 169)
- No. Panggil
- E1676
Iptek penukaran ion
No Inv.: 1024-1033/P/Perp/97/10c
- Edisi
- -
- ISBN/ISSN
- 9795332899
- Deskripsi Fisik
- xi, 234 hlm.
- Judul Seri
- -
- No. Panggil
- 541.37 DOR i
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