This third edition of “Semiconductor Lasers, Stability, Instability and Chaos” was significantly extended. In the previous edition, the dynamics and characteristics of chaos in semiconductor lasers after the introduction of the fundamental theory of laser chaos and chaotic dynamics induced by self-optical feedback and optical injection was discussed. Semiconductor lasers with new device st…
This book explains concepts of transmission electron microscopy (TEM) and x-ray diffractometry (XRD) that are important for the characterization of materials. The fourth edition adds important new techniques of TEM such as electron tomography, nanobeam diffraction, and geometric phase analysis. A new chapter on neutron scattering completes the trio of x-ray, electron and neutron diffraction. Al…
This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by v…
No Inv.: 1024-1033/P/Perp/97/10c
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of m…
- Sebelumnya diterbitkan sebagai vol. 48 dalam "Springer Series on Atomic, Optical, and Plasma Physics", 2008. - Theoretical investigations of atoms and molecules interacting with pulsed or continuous wave lasers up to atomic field strengths on the order of 10^16 W/cm² are leading to an understanding of many challenging experimental discoveries. This book deals with the basics of femtosecon…
Colloidal nanocrystals show much promise as an optoelectronics architecture due to facile control over electronic properties afforded by chemical control of size, shape, and heterostructure. Unfortunately, realizing practical devices has been forestalled by the ubiquitous presence of charge "trap" states which compete with band-edge excitons and result in limited device efficiencies. Little is …
Tin (Sn) whiskers are electrically conductive, single crystal eruptions that grow from Sn film surfaces. Their high aspect ratio presents reliability problems for the electronics industry due to bridging and metal arcing, leading to malfunctions and catastrophic failures in many electronic systems (including satellite and defense sectors). Due to legislation in the EU, Japan, and the U.S., mand…
No Inv.: 312/S/Perp/97/1c
No Inv.: 337/S/Perp/97/1c